[PhD]: Reliability and Failure Mechanisms of GaN Power Devices F/H

Gallium Nitride (GaN) power transistors are increasingly deployed in high-efficiency power conversion systems due to their superior switching performance and high power density. However, their long-term reliability under realistic switching conditions remains insufficiently understood, limiting their widespread adoption in safety-critical applications such as aerospace systems.

The objective of this PhD is to investigate the reliability and failure mechanisms of GaN power transistors under dynamic operating conditions representative of real mission profiles.

The research activities will include:

• Electrical characterization of commercial GaN power transistors.
• Investigation of trapping effects and dynamic degradation phenomena during switching operation.
• Design and development of dedicated dynamic reliability test benches.
• Analysis of electrical parameter drifts before and after aging tests.
• Correlation of failure m...